Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: comparison between up- and down-flow orientations

被引：0
|
作者：
Zhang, J. [1 ]
Ellison, A. [2 ]
Danielsson, Ö. [1 ]
Henry, A. [1 ]
Janzén, E. [1 ]
机构：
[1] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
[2] Okmetic AB, Hans Meijers väg 2, SE-583 30 Linköping, Sweden
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
Down flow orientations - Flow orientation - Hot wall reactor - Low residual doping;
D O I：
10.4028/www.scientific.net/msf.353-356.91
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：91 / 94
相关论文
共 50 条
  • [31] Epitaxial growth of 4H-SIC on 4° off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition
    Wada, Keiji
    Kimoto, Tsunenobu
    Nishikawa, Kimito
    Matsunami, Hiroyuki
    JOURNAL OF CRYSTAL GROWTH, 2006, 291 (02) : 370 - 374
  • [32] Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition
    Danno, K
    Kimoto, T
    Asano, K
    Sugawara, Y
    Matsunami, H
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 324 - 329
  • [33] Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition
    Nishio, J
    Kushibe, M
    Masahara, K
    Kojima, K
    Ohno, T
    Ishida, Y
    Takahashi, T
    Suzuki, T
    Tanaka, T
    Yoshida, S
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 215 - 218
  • [34] Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition
    Nishio, Johji
    Kushibe, Mitsuhiro
    Masahara, Koh
    Kojima, Kazutoshi
    Ohno, Toshiyuki
    Ishida, Yuki
    Takahashi, Tetsuo
    Suzuki, Takaya
    Tanaka, Tomoyuki
    Yoshida, Sadafumi
    Arai, Kazuo
    Materials Science Forum, 2002, 389-393 (01) : 215 - 218
  • [35] High growth rate (up to 20 μm/h) SiC epitaxy in a horizontal hot-wall reactor
    Zhang, J
    Mazzola, J
    Hoff, C
    Koshka, Y
    Casady, J
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 77 - 80
  • [36] High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor
    Gong, Xiaoliang
    Xie, Tianle
    Hu, Fan
    Li, Ping
    Ba, Sai
    Wang, Liancheng
    Zhu, Wenhui
    COATINGS, 2024, 14 (07)
  • [37] KINETIC PROCESSES IN THE CVD OF SIC FROM CH3SICL3-H-2 IN A VERTICAL HOT-WALL REACTOR
    LANGLAIS, F
    LOUMAGNE, F
    LESPIAUX, D
    SCHAMM, S
    NASLAIN, R
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 105 - 112
  • [38] Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor
    Tsuchida, H
    Kamata, I
    Jikimoto, T
    Izumi, K
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1206 - 1212
  • [39] Hot-wall CVD growth of 4H-SiC using Si2Cl6+C3H8+H2 system
    Miyanagi, T
    Nishino, S
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 199 - 202
  • [40] Simulation of high-temperature SiC epitaxial growth using vertical, quasi-hot-wall CVD reactor
    Hasegawa, M
    Miyauchi, A
    Masahara, K
    Ishida, Y
    Takahashi, T
    Ohno, T
    Nishio, J
    Suzuki, T
    Tanaka, T
    Yoshida, S
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 227 - 230
12345