Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: comparison between up- and down-flow orientations

被引：0
|
作者：
Zhang, J. [1 ]
Ellison, A. [2 ]
Danielsson, Ö. [1 ]
Henry, A. [1 ]
Janzén, E. [1 ]
机构：
[1] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
[2] Okmetic AB, Hans Meijers väg 2, SE-583 30 Linköping, Sweden
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
Down flow orientations - Flow orientation - Hot wall reactor - Low residual doping;
D O I：
10.4028/www.scientific.net/msf.353-356.91
中图分类号：
学科分类号：
摘要：
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页码：91 / 94
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