SOME FEATURES OF THE ELECTRICAL PROPERTIES OF EPITAXIAL TIN-DOPED GALLIUM ARSENIDE.

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作者：
Emel'yanenko, O.V.
Lagunova, T.S.
Radu, R.K.
Talalakin, G.N.
Telegin, A.A.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 05期
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摘要：
The galvanomagnetic properties of tin-doped GaAs films were studied to determine the degree of amphoteric behavior of tin in GaAs and its influence on the principal physical properties.
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页码：665 / 666
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