SOME FEATURES OF THE ELECTRICAL PROPERTIES OF EPITAXIAL TIN-DOPED GALLIUM ARSENIDE.

被引：0
|
作者：
Emel'yanenko, O.V.
Lagunova, T.S.
Radu, R.K.
Talalakin, G.N.
Telegin, A.A.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The galvanomagnetic properties of tin-doped GaAs films were studied to determine the degree of amphoteric behavior of tin in GaAs and its influence on the principal physical properties.
引用
收藏
页码：665 / 666
相关论文
共 50 条
  • [31] PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE
    MARUYAMA, M
    KIKUCHI, S
    MIZUNO, O
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) : 413 - &
  • [32] Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron
    S. S. Khludkov
    I. A. Prudaev
    O. P. Tolbanov
    Russian Physics Journal, 2018, 61 : 491 - 497
  • [33] Thermovoltaic processes in gallium arsenide doped with tin
    A. Yu. Leiderman
    A. S. Saidov
    M. M. Hashaev
    U. Kh. Rakhmonov
    Applied Solar Energy, 2012, 48 (3) : 165 - 168
  • [34] INFLUENCE OF ISOELECTRONIC IMPURITIES ON INTRINSIC DEEP LEVELS IN LIQUID PHASE EPITAXIAL GALLIUM ARSENIDE.
    Kalukhov, V.A.
    Chikichev, S.I.
    Physica Status Solidi (A) Applied Research, 1985, 88 (01):
  • [35] SOME ELECTRICAL PROPERTIES OF SEMI-INSULATING GALLIUM ARSENIDE
    KULSRESH.AP
    YUNOVICH, AE
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 2058 - +
  • [36] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM-ARSENIDE
    BRODOVOI, VA
    DERIKOT, NZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 958 - 959
  • [37] INVESTIGATION OF SOME PROPERTIES OF IRON-DOPED GALLIUM ARSENIDE
    KADYROV, MA
    OMELYANO.EM
    PERVOVA, LY
    SOLOVEV, NN
    FISTUL, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 713 - +
  • [38] INFLUENCE OF AN INHOMOGENEOUS DISTRIBUTION OF IMPURITIES ON ELECTRICAL PROPERTIES OF EPITAXIAL FILMS OF GALLIUM ARSENIDE
    LISENKER, BS
    MARONCHU.IE
    MARONCHU.YE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1839 - &
  • [39] Anisotropic electrical properties of tin-doped antimony telluride single crystals
    Ivanova, LD
    Granatkina, YV
    Sidorov, YA
    INORGANIC MATERIALS, 1998, 34 (01) : 26 - 30
  • [40] Electrical properties of heteroepitaxial grown tin-doped indium oxide films
    Taga, N
    Odaka, H
    Shigesato, Y
    Yasui, I
    Kamei, M
    Haynes, TE
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 978 - 984
12345