CHARACTERISTICS OF HIGH TEMPERATURE ANNEALING ON MODULATION DOPED GaAs/AlxGa1 - xAs HETEROSTRUCTURES.

被引：0
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作者：
Xin, Shangheng [1 ]
机构：
[1] Shanghai Jiaotong Univ, China, Shanghai Jiaotong Univ, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 05期
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摘要：
SEMICONDUCTOR DEVICES
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页码：509 / 515
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