Modification of low-temperature current-gain model for polysilicon emitter bipolar transistor

被引：0

作者：

Su, Jiuling ^{[1
]}

Chang, Xu ^{[1
]}

机构：

[1] Shanghai Jiaotong Univ, Shanghai, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1996年 / 17卷 / 08期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：617 / 621

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