Modification of low-temperature current-gain model for polysilicon emitter bipolar transistor

被引：0
|
作者：
Su, Jiuling [1 ]
Chang, Xu [1 ]
机构：
[1] Shanghai Jiaotong Univ, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1996年 / 17卷 / 08期
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页码：617 / 621
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