ANNEALING EFFECTS OF Al/N-TYPE 6H SiC RECTIFYING CONTACTS.

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作者：
Yasuda, Kazuhito [1 ]
Hayakawa, Toshitaka [1 ]
Saji, Manabu [1 ]
机构：
[1] Showa-ku, Nagoya Inst of Technol,, Dep of Electr & Comput Eng,, Nagoya,, Showa-ku, Nagoya Inst of Technol, Dep of Electr & Comput Eng, Nagoya,
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 09期
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21
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页码：2002 / 2008
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