共 50 条
- [1] PHOTOCONDUCTIVITY AND LUMINESCENCE OF THE 4H-POLYTYPE AND 6H-POLYTYPE OF N-TYPE SIC DOPED WITH SC SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 795 - 798
- [3] Fabrication of low resistivity n-type 6H and 4H SiC substrates by the sublimation growth SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 65 - 68
- [5] New Lines in High Resolution IR Luminescence Spectra of SiC Single Crystals of the 4H and 6H Polytypes Optics and Spectroscopy, 2020, 128 : 1374 - 1378
- [6] Rectifying contacts to n-type 6H and 4H-SiC SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM, PTS 1-3: 1ST CONFERENCE ON FUTURE SCIENCE & EARTH SCIENCE MISSIONS; 1ST CONFERENCE ON SYNERGISTIC POWER & PROPULSION SYSTEMS TECHNOLOGY; 1ST CONFERENCE ON APPLICATIONS OF THERMOPHYSICS IN MICROGRAVITY; 2ND CONFERENCE ON COMMERCIAL DEVELOPMENT OF SPACE; - 2ND CONFERENCE ON NEXT GENERATION LAUNCH SYSTEMS; 14TH SYMPOSIUM ON SPACE NUCLEAR POWER AND PROPULSION, 1997, (387): : 851 - 856
- [7] Electrical transport properties of n-type 4H and 6H silicon carbide SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 555 - 560
- [8] Triangular pore formation in highly doped n-type 4H SIC SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1467 - 1470