PHOTOCONDUCTIVITY AND LUMINESCENCE OF THE 4H AND 6H POLYTYPES OF n-TYPE SiC DOPED WITH Sc.

被引：0
|
作者：
Lomakina, G.A.
Sokolov, V.I.
Vodakov, Yu.A.
机构：
来源：
Soviet physics. Semiconductors | 1982年 / 16卷 / 07期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
LUMINESCENCE - PHOTOCONDUCTIVITY
引用
收藏
页码：795 / 798
相关论文
共 50 条
  • [21] Temperature dependence of the band structure of 3C, 2H, 4H, and 6H SiC polytypes
    Zubkova, SM
    Rusina, LN
    Smelyanskaya, EV
    SEMICONDUCTORS, 2003, 37 (03) : 239 - 248
  • [22] EPR study of conduction electrons in heavily doped n-type 4H SiC
    Savchenko, Dariya V.
    Kalabukhova, Ekaterina N.
    Poeppl, Andreas
    Mokhov, Evgenij N.
    Shanina, Bela D.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (12): : 2950 - 2956
  • [23] OPTICAL-ABSORPTION IN N-TYPE SIC(4H)
    SELEZNEV, BI
    TAIROV, YM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 680 - 680
  • [24] Specific contact resistance as a function of doping for n-type 4H and 6H-SiC
    Crofton, J
    Luckowski, ED
    Williams, JR
    IsaacsSmith, T
    Bozack, MJ
    Siergiej, R
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 569 - 572
  • [25] Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes
    Syrkin, AL
    Bluet, JM
    Bastide, G
    Bretagnon, T
    Lebedev, AA
    Rastegaeva, MG
    Savkina, NS
    Chelnokov, VE
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 236 - 239
  • [26] Improved ohmic contact to n-type 4H and 6H-SiC using nichrome
    E. D. Luckowski
    J. M. Delucca
    J. R. Williams
    S. E. Mohney
    M. J. Bozack
    T. Isaacs-Smith
    J. Crofton
    Journal of Electronic Materials, 1998, 27 : 330 - 334
  • [27] Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes
    Universite Montpellier II `Sciences, et Techniques du Languedoc', Montpellier, France
    Mater Sci Eng B Solid State Adv Technol, 1-3 (236-239):
  • [28] Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC
    Fan, Jiyang
    Li, Hongxia
    Wang, Jing
    Xiao, Min
    APPLIED PHYSICS LETTERS, 2012, 101 (13)
  • [29] Photoluminescence excitation spectroscopy on the donor-acceptor pair luminescence in 4H and 6H SiC
    Ivanov, IG
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 585 - 588
  • [30] LUMINESCENCE OF 4H SIC AND LOCATION OF CONDUCTION-BAND MINIMA IN SIC POLYTYPES
    PATRICK, L
    CHOYKE, WJ
    HAMILTON, DR
    PHYSICAL REVIEW, 1965, 137 (5A): : 1515 - &
12345