1/f NOISE IN ION-IMPLANTED GaAs.

被引：0
|
作者：
Hashiguchi, Sumihisa [1 ]
Sugiyama, Hisashi [1 ]
机构：
[1] Yamanashi Univ, Kofu, Jpn, Yamanashi Univ, Kofu, Jpn
来源：
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1986年 / 69卷 / 04期
关键词：
NOISE; SPURIOUS SIGNAL - Measurements;
D O I：
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中图分类号：
学科分类号：
摘要：
The 1/f noise is believed to be caused by the lattice scattering in the bulk, and also that the noise is proportional to ( mu / mu //L)**2, the square of the ratio of the total mobility mu to the lattice scattering mobility mu //L. In this paper, the mobility has been changed by varying temperature, and the relation between the noise and the mobiliby has been studied.
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页码：103 / 108
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