1/f NOISE IN ION-IMPLANTED GaAs.

被引：0

作者：

Hashiguchi, Sumihisa ^{[1
]}

Sugiyama, Hisashi ^{[1
]}

机构：

[1] Yamanashi Univ, Kofu, Jpn, Yamanashi Univ, Kofu, Jpn

来源：

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1986年 / 69卷 / 04期

关键词：

NOISE; SPURIOUS SIGNAL - Measurements;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The 1/f noise is believed to be caused by the lattice scattering in the bulk, and also that the noise is proportional to ( mu / mu //L)**2, the square of the ratio of the total mobility mu to the lattice scattering mobility mu //L. In this paper, the mobility has been changed by varying temperature, and the relation between the noise and the mobiliby has been studied.

引用

页码：103 / 108

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