Optical transitions via the structure-defect levels due to lattice vacancies in InSb

被引：0

作者：

Chen, Jun-Yuan ^{[1
]}

Lo, Jenn-Gee ^{[1
]}

Lu, Luke Su ^{[1
]}

机构：

[1] Chung Cheng Inst of Technology, Taoyuan, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 06期

关键词：

D O I：

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学科分类号：

摘要：

引用

页码：1169 / 1175

共 44 条

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[30] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND
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