Tunable magneto-optical properties in MoS2 via defect-induced exciton transitions

被引:11
|
作者
Amit, Tomer [1 ]
Hernangomez-Perez, Daniel [1 ]
Cohen, Galit [1 ]
Qiu, Diana Y. [2 ]
Refaely-Abramson, Sivan [1 ]
机构
[1] Weizmann Inst Sci, Dept Mol Chem & Mat Sci, IL-7610001 Rehovot, Israel
[2] Yale Univ, Dept Mech Engn & Mat Sci, New Haven, CT 06511 USA
关键词
ELECTRON-HOLE EXCITATIONS; QUASI-PARTICLE; MONOLAYER MOS2; QUANTUM LIGHT; SEMICONDUCTORS; EMITTERS;
D O I
10.1103/PhysRevB.106.L161407
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The presence of chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs) leads to excitons with mixed localized-delocalized character and to reduced valley selectivity. Recent experimental advances in defect design in TMDs allow for a close examination of such mixed exciton states as a function of their degree of circular polarization under external magnetic fields, revealing strongly varying defect-induced magnetic properties. A theoretical understanding of these observations and their physical origins demands a predictive, structure-sensitive theory. In this work, we study the effect of chalcogen vacancies on the exciton magnetic properties in monolayer MoS2. Using many-body perturbation theory, we show how the complex excitonic picture associated with the presence of defects-with reduced valley and spin selectivity due to hybridized electron-hole transitions-leads to a structurally controllable exciton magnetic response. We find a variety of g-factors with changing magnitudes and sign depending on the exciton energy and character. Our findings suggest a pathway to tune the nature of the excitons-and by that their magneto-optical properties-through defect architecture.
引用
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页数:6
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