Gold films epitaxially grown by diffusion at the 3C-SiC/Si interface

被引：0
|
作者：
Komninou, Ph. [1 ]
Stoemenos, J. [1 ]
Nouet, G. [2 ]
Karakostas, Th. [1 ]
机构：
[1] Department of Physics, Aristotle Univ. Thessaloniki, 54006, Thessaloniki, Greece
[2] LERMAT, UPRESA, CNRS 6004, 6 Blvd. M., Caen Cedex, France
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
关键词：
Diffusion in solids - Dislocations (crystals) - Epitaxial growth - Gold - Grain boundaries - Heat treatment - Phase interfaces - Schottky barrier diodes - Semiconducting silicon - Semiconducting silicon compounds - Silicon carbide - Stacking faults;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：103 / 112
相关论文
共 50 条
  • [41] Effect of a 3C-SiC Buffer Layer on the SAW Properties of AlN Films Grown on Si Substrates
    Chung, Gwiy-Sang
    Hong, Hoang-Si
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (04) : 1446 - 1450
  • [42] Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (111)Si substrates
    Komiyama, Jun
    Eriguchi, Kenichi
    Abe, Yoshihisa
    Suzuki, Shunichi
    Nakanishi, Hideo
    Yamane, Takayoshi
    Murakami, Hisashi
    Koukitu, Akinori
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (01) : 96 - 100
  • [43] Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths
    S. -Y. Hwang
    J. -H. Park
    H. J. Song
    S. J. Jang
    Su Hwan Oh
    Moon Ho Park
    J. -H. Kim
    B. -T. Lee
    Journal of Electronic Materials, 2004, 33 : L11 - L14
  • [44] Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates
    Piluso, N.
    Severino, A.
    Camarda, M.
    Canino, A.
    La Magna, A.
    La Via, F.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 99 - 102
  • [45] Raman investigation of stress relaxation at the 3C-SiC/Si interface
    Bluet, JM
    Falkovsky, LA
    Planes, N
    Camassel, J
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 395 - 398
  • [46] Characteristics of polycrystalline 3C-SiC thin films grown on Si wafers for harsh environment microdevices
    Chung, Gwiy-Sang
    Kim, Kang-San
    Han, Ki-Bong
    CERAMICS INTERNATIONAL, 2008, 34 (04) : 841 - 844
  • [47] Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPE
    Komiyama, Jun
    Abe, Yoshihisa
    Suzuki, Shunichi
    Nakanishi, Hideo
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 223 - 227
  • [48] 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
    Nagasawa, H.
    Yagi, K.
    Physica Status Solidi (B): Basic Research, 202 (01):
  • [49] Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths
    Hwang, SY
    Park, JH
    Song, HJ
    Jang, SJ
    Oh, SH
    Park, MH
    Kim, JH
    Lee, BT
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : L11 - L14
  • [50] Improvement of the 3C-SiC/Si interface by flash lamp annealing
    Panknin, D.
    Stoemenos, J.
    Eickhoff, M.
    Heera, V.
    Vouroutzis, N.
    Krötz, G.
    Skorupa, W.
    Materials Science Forum, 2001, 353-356 : 151 - 154
12345