Gold films epitaxially grown by diffusion at the 3C-SiC/Si interface

被引：0
|
作者：
Komninou, Ph. [1 ]
Stoemenos, J. [1 ]
Nouet, G. [2 ]
Karakostas, Th. [1 ]
机构：
[1] Department of Physics, Aristotle Univ. Thessaloniki, 54006, Thessaloniki, Greece
[2] LERMAT, UPRESA, CNRS 6004, 6 Blvd. M., Caen Cedex, France
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
关键词：
Diffusion in solids - Dislocations (crystals) - Epitaxial growth - Gold - Grain boundaries - Heat treatment - Phase interfaces - Schottky barrier diodes - Semiconducting silicon - Semiconducting silicon compounds - Silicon carbide - Stacking faults;
D O I：
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摘要：
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页码：103 / 112
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