Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers

被引:0
|
作者
机构
[1] Liu, Kai
[2] 1,Krotkus, Arunas
[3] 1,Bertulis, K.
[4] Xu, Jingzhou
[5] Zhang, X.-C.
来源
Liu, K. (zhangxc@rpi.edu) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] ROLE OF EXCESS AS IN LOW-TEMPERATURE-GROWN GAAS
    WARREN, AC
    WOODALL, JM
    KIRCHNER, PD
    YIN, X
    POLLAK, F
    MELLOCH, MR
    OTSUKA, N
    MAHALINGAM, K
    PHYSICAL REVIEW B, 1992, 46 (08): : 4617 - 4620
  • [42] The behavior of As precipitates in low-temperature-grown GaAs
    Bourgoin, JC
    Khirouni, K
    Stellmacher, M
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 442 - 444
  • [43] Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures
    Biciunas, A.
    Geizutis, A.
    Krotkus, A.
    ELECTRONICS LETTERS, 2011, 47 (02) : 130 - +
  • [44] DIFFUSION OF GALLIUM VACANCIES FROM LOW-TEMPERATURE-GROWN GAAS
    OHBU, I
    TAKAHAMA, M
    IMAMURA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12A): : L1647 - L1649
  • [45] Be-doped low-temperature grown GaAs for ultrafast optoelectronic devices and applications
    Coutaz, JL
    Roux, JF
    Gaarder, A
    Marcinkevicius, S
    Jasinski, J
    Korona, K
    Kaminska, M
    Bertulis, K
    Krotkus, A
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 89 - 96
  • [46] Relaxation process of photoexcited carriers in GaAs structures with low-temperature-grown layers
    Araya, T
    Kato, N
    Otsuka, N
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
  • [47] Positron beam study of low-temperature-grown GaAs with aluminum delta layers
    Fleischer, S
    Hu, YF
    Beling, CD
    Fung, S
    Smith, TL
    Moulding, KM
    Weng, HM
    Missous, M
    APPLIED SURFACE SCIENCE, 1999, 149 (1-4) : 159 - 164
  • [48] Diffusion of gallium vacancies from low-temperature-grown GaAs
    Ohbu, Isao
    Takahama, Mitsuharu
    Imamura, Yoshinori
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (12 A):
  • [49] Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
    Bert, NA
    Chaldyshev, VV
    Suvorova, AA
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Werner, P
    APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1588 - 1590
  • [50] Temperature dependence of galvanomagnetic properties of undoped n-type GaAs/GaAs and n-type InGaAs/InP layers
    Wolkenberg, A.
    PrzesLawski, T.
    Regiński, K.
    Kaniewski, J.
    Electron Technology, 2002, 34