Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers

被引:0
|
作者
机构
[1] Liu, Kai
[2] 1,Krotkus, Arunas
[3] 1,Bertulis, K.
[4] Xu, Jingzhou
[5] Zhang, X.-C.
来源
Liu, K. (zhangxc@rpi.edu) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Effect of Doped Buffer in Low-Temperature-Grown GaAs Terahertz Photoconductive Antenna Emitters and Detectors
    Prieto, Elizabeth Ann
    De los Reyes, Alexander
    Vistro, Victor D. C. Andres
    Cabello, Neil Irvin
    Faustino, Maria Angela
    Ferrolino, John Paul
    Vasquez, John Daniel
    Bardolaza, Hannah
    Afalla, Jessica Pauline
    Mag-usara, Valynn Katrine
    Kitahara, Hideaki
    Tani, Masahiko
    Somintac, Armando
    Salvador, Arnel
    Estacio, Elmer
    2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2020,
  • [32] Optical and terahertz power limits in the low-temperature-grown GaAs photomixers
    Verghese, S
    McIntosh, KA
    Brown, ER
    APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2743 - 2745
  • [33] Photoconductivity of Be-doped GaAs under intense terahertz radiation
    Lewis, RA
    Bradley, IV
    Henini, M
    SOLID STATE COMMUNICATIONS, 2002, 122 (3-4) : 223 - 228
  • [34] Terahertz wave generation with low-temperature-grown GaAs photoconductive antennas
    Li, Tieyuan
    Lou, Caiyun
    Wang, Li
    Huang, Jin
    Zhao, Guozhong
    Shi, Xiaoxi
    Zhongguo Jiguang/Chinese Journal of Lasers, 2009, 36 (04): : 978 - 982
  • [35] NOISE STUDIES OF HFETS ON LOW-TEMPERATURE-GROWN GAAS BUFFERS AND OF MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION
    VANRHEENEN, AD
    LIN, Y
    TEHRANI, S
    CHEN, CL
    SMITH, FW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 82 - 85
  • [36] Terahertz emission enhancement in low-temperature-grown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries
    Prieto, Elizabeth Ann P.
    Vizcara, Sheryl Ann B.
    Somintac, Armando S.
    Salvador, Arnel A.
    Estacio, Elmer S.
    Que, Christopher T.
    Yamamoto, Kohji
    Tani, Masahiko
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2014, 31 (02) : 291 - 295
  • [37] Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector
    Peytavit, E
    Arscott, S
    Lippens, D
    Mouret, G
    Matton, S
    Masselin, P
    Bocquet, R
    Lampin, JF
    Desplanque, L
    Mollot, F
    APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1174 - 1176
  • [38] On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers
    Kowalski, G
    Frymark, I
    Krotkus, A
    Bertulis, K
    Kaminska, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 449 - 452
  • [39] FERMI-LEVEL OF LOW-TEMPERATURE-GROWN GAAS ON SI-DELTA-DOPED GAAS
    HSU, TM
    LEE, WC
    WU, JR
    CHYI, JI
    PHYSICAL REVIEW B, 1995, 51 (23): : 17215 - 17218
  • [40] Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs
    Mikulics, M
    Camara, I
    Marso, M
    van der Hart, A
    Fox, A
    Förster, A
    Güsten, R
    Lüth, H
    Kordos, P
    ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004, : 231 - 234