Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers

被引：0
|
作者：
Mchedlidze, Teimouraz [1 ]
Matsumoto, Kei [1 ]
Asano, Eiichi [1 ]
机构：
[1] Research and Development Department, Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Kanagawa 254-0014, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 6 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3426 / 3432
相关论文
共 50 条
  • [41] Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon
    Nanjing Univ, Nanjing, China
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (07): : 489 - 492
  • [42] ELECTRICAL PROPERTY STUDIES OF OXYGEN IN CZOCHRALSKI-GROWN NEUTRON-TRANSMUTATION-DOPED SILICON
    CLELAND, JW
    FUKUOKA, N
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 203 - 203
  • [43] Defects in Czochralski-grown silicon crystals investigated by positron annihilation
    Ikari, Atsushi
    Applied Surface Science, 1995, 85 (1-4): : 253 - 258
  • [44] THE EFFECT OF THERMAL HISTORY DURING CRYSTAL-GROWTH ON OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON
    PUZANOV, NI
    EIDENZON, AM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 406 - 413
  • [45] TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON
    ZHOU, X
    PRESTON, AR
    HUMPHREYS, CJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 211 - 216
  • [46] Relation between minute lattice strain and anomalous oxygen precipitation in a Czochralski-grown silicon crystal
    Kimura, S
    Ikarashi, T
    Tanikawa, A
    Ishikawa, T
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1743 - 1747
  • [47] Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon
    Ohshita, Y
    Vu, TK
    Yamaguchi, M
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3741 - 3744
  • [48] Axial microscopic distribution of grown-in defects in Czochralski-grown silicon crystals
    Umeno, Shigeru, 1600, (32):
  • [49] SIMULATION OF OXYGEN PRECIPITATION IN CZOCHRALSKI GROWN SILICON
    SCHREMS, M
    BRABEC, T
    BUDIL, M
    POTZL, H
    GUERRERO, E
    HUBER, D
    PONGRATZ, P
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 393 - 399
  • [50] The effect of germanium doping on oxygen donors in Czochralski-grown silicon
    Hong, L
    Yang, DR
    Yu, XG
    Ma, XY
    Tian, DX
    Li, LB
    Que, DL
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (32) : 5745 - 5750
12345