Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers

被引：0
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作者：
Mchedlidze, Teimouraz [1 ]
Matsumoto, Kei [1 ]
Asano, Eiichi [1 ]
机构：
[1] Research and Development Department, Komatsu Electronic Metals Co., Ltd., 2612 Shinomiya, Hiratsuka, Kanagawa 254-0014, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 6 A期
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页码：3426 / 3432
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