A self-consistent non-quasi-static MOSFET model for circuit simulation based on transient carrier response

被引：0

作者：

Nakayama, Noriaki ^{[1
]}

Ueno, Hiroaki ^{[1
]}

Inoue, Tetsuhiro ^{[1
]}

Isa, Takashi ^{[1
]}

Tanaka, Masayasu ^{[1
]}

Miura-Mattausch, Mitiko ^{[1
]}

机构：

[1] Grad. Sch. of Adv. Sci. of Matter, Hiroshima University, 1-3-1 Kagamiyana, Higashi-Hiroshima 739-8530, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 B期

关键词：

Approximation theory - Carrier concentration - Computer simulation - Electric currents - Equivalent circuits - Integral equations - Mathematical models - Semiconductor device models;

D O I：

10.1143/jjap.42.2132

中图分类号：

学科分类号：

摘要：

We have developed a basic concept for a non-quasi-static (NQS) metal-oxide-semiconductor field-effect transistor (MOSFET) model for circuit simulation. The model is based on a carrier-response delay, and incorporates the time and position dependence of the carrier density along the channel. This is the exact origin of the NQS effect. By comparing model results with 2D device simulation results, solving the continuity equation explicitly, we found that the carrier-response delay consisted of a conductive delay and a charging delay. The developed model was successfully applied to test transient behavior of the drain current.

引用

页码：2132 / 2136

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