A new CAD-compatible non-quasi-static MOS transient model with direct inclusion of depletion charge variations

被引：0
|
作者：
Kwon, DH
Yu, YS
Kim, KH
Yoon, TW
Hwang, SW [1 ]
Song, DH
Lee, KH
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[2] LG Semicond 1, ULSI Labs, Cheongju 360480, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1998年 / 33卷
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new CAD-compatible non-quasi-static MOS transient model is presented. Direct inclusion of depletion charge variation has been made by applying the collocation method for the model derivation. The new model accurately predicts transient currents in the cases including the cutoff region where the variation of the depletion charge is high. Furthermore, in the new model, no additional parameters other than the DC parameters are needed.
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收藏
页码：S192 / S195
页数：4
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