Highly conductive Boron doped microcrystalline Si films deposited by hot wire cell method and its application to solar cells

被引：0
|
作者：
Miyajima, Shinsuke [1 ]
Kim, Mingyu [1 ]
Ide, Yoshinori [1 ]
Yamada, Akira [2 ]
Konagai, Makoto [1 ]
机构：
[1] Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
[2] Res. Center for Quantum Effect Elec., Tokyo Institute of Technology, 2-12-1, O-okayama, Merguro-ku, Tokyo 152-8552, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 6 A期
关键词：
D O I：
10.1143/jjap.42.3328
中图分类号：
学科分类号：
摘要：
Semiconducting silicon
引用
收藏
页码：3328 / 3332
相关论文
共 50 条
  • [41] COMPARATIVE STUDIES OF STRUCTURAL AND ELECTRICAL PROPERTIES OF DOPED MICROCRYSTALLINE SILICON THIN FILMS DEPOSITED BY HOT-WIRE CHEMICAL VAPOR DEPOSITION
    Kumar, P.
    Schroeder, B.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 852 - +
  • [42] Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Si heterojunction solar cell applications
    Lien, Shui-Yang
    Wuu, Dong-Sing
    Wu, Bing-Rui
    Horng, Ray-Hua
    Tseng, Ming-Chun
    Yu, Hsin-Her
    THIN SOLID FILMS, 2008, 516 (05) : 765 - 769
  • [43] Investigation of the Si: H films deposited near the transition region for application in solar cells
    Lei, Qingsong
    Wu, Zhimeng
    Geng, Xinhua
    Zhao, Ying
    Xi, Jianping
    MODERN PHYSICS LETTERS B, 2006, 20 (27): : 1739 - 1747
  • [44] Epitaxial growth of strained Si1-yCy films by the hot-wire cell method and its application to metal oxide semiconductor devices
    Watahiki, T
    Abe, K
    Yamada, A
    Konagai, M
    THIN SOLID FILMS, 2003, 430 (1-2) : 283 - 286
  • [45] Hot-wire chemical vapor-deposited microcrystalline silicon in single and tandem n-i-p solar cells
    Stolk, R. L.
    Li, H.
    Franken, R. H.
    Strengers, J. J. H.
    van der Werf, C. H. M.
    Rath, J. K.
    Schropp, R. E. I.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1933 - 1936
  • [46] Microcrystalline silicon n-i-p solar cells deposited entirely by the hot-wire chemical vapor deposition technique
    Wang, Q
    Iwaniczko, E
    Mahan, AH
    Williamson, DL
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 903 - 908
  • [47] Nanocrystalline cubic Silicon Carbide thin films for the window layer of solar cells deposited by Hot Wire CVD
    Jha, Himanshu S.
    Singh, M.
    Yadav, Asha
    Lalhriatzuala
    Deva, Dinesh
    Agarwal, Pratima
    16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES, 2012, 8549
  • [48] High rate deposition of silicon thin films by hot wire cell method for solar cell applications
    Konagai, M
    Tsushima, T
    Ide, Y
    Asakusa, K
    Fujisaki, T
    Kim, MK
    Wakita, Y
    Yamada, A
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 788 - 791
  • [49] Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method
    Watahiki, T
    Abe, K
    Tamura, H
    Miyajima, S
    Yamada, A
    Konagai, M
    THIN SOLID FILMS, 2001, 395 (1-2) : 221 - 224
  • [50] Optimization and characterization of highly conductive and transparent Al-doped ZnO films for solar cell applications
    Singh, AV
    Mehra, RM
    Wakahara, A
    Yoshida, A
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 551 - 554
12345