Highly conductive Boron doped microcrystalline Si films deposited by hot wire cell method and its application to solar cells

被引：0
|
作者：
Miyajima, Shinsuke [1 ]
Kim, Mingyu [1 ]
Ide, Yoshinori [1 ]
Yamada, Akira [2 ]
Konagai, Makoto [1 ]
机构：
[1] Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
[2] Res. Center for Quantum Effect Elec., Tokyo Institute of Technology, 2-12-1, O-okayama, Merguro-ku, Tokyo 152-8552, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 6 A期
关键词：
D O I：
10.1143/jjap.42.3328
中图分类号：
学科分类号：
摘要：
Semiconducting silicon
引用
收藏
页码：3328 / 3332
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