共 50 条
- [31] INVESTIGATION OF DEEP STATES IN THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1989, 333 (4-5): : 531 - 534
- [32] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 303 - 314
- [33] STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING DEEP LEVEL TRANSIENT SPECTROSCOPY APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (03): : 273 - 277
- [35] AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence GALLIUM NITRIDE MATERIALS AND DEVICES XIII, 2018, 10532
- [37] Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon -: art. no. 195211 PHYSICAL REVIEW B, 2002, 66 (19): : 1 - 8