INVESTIGATION OF DEEP STATES IN THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY

被引：1

作者：

HERION, J ^{[1
]}

TAPIERO, M ^{[1
]}

ZIELINGER, JP ^{[1
]}

BENJELLOUNSAKI, N ^{[1
]}

BEYER, W ^{[1
]}

机构：

[1] INST PHYS & CHIM MAT STRASBOURG, OPT NONLINEAIRE & OPTOELECTR GRP, F-67084 STRASBOURG, FRANCE

来源：

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE | 1989年 / 333卷 / 4-5期

关键词：

D O I：

10.1007/BF00572371

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：531 / 534

页数：4

共 50 条

[1] 1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
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[8] DEEP STATES DISTRIBUTION IN UNDOPED AMORPHOUS-SILICON STUDIED BY CURRENT TRANSIENT SPECTROSCOPY
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