TEMPERATURE-DEPENDENT EFFECTS IN FIELD-EFFECT MEASUREMENTS ON HYDROGENATED AMORPHOUS SILICON THIN-FILM TRANSISTORS.

被引：0

作者：

Schumacher, R. ^{[1
]}

Thomas P. ^{[1
]}

Weber, K. ^{[1
]}

Fuhs, W. ^{[1
]}

Djamdji, F. ^{[1
]}

Le Comber, P.G. ^{[1
]}

Schropp, R.E.I. ^{[1
]}

机构：

[1] Philipps Univ Marburg, Marburg, West Ger, Philipps Univ Marburg, Marburg, West Ger

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 58卷 / 04期

关键词：

ELECTRIC CONDUCTIVITY - SEMICONDUCTING SILICON - Amorphous - SOLID STATE DEVICES; THIN FILM - Thermal Effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The activation energy of the source-drain current I//S//D in hydrogenated amorphous silicon thin-film transistors shows a correlation with the extrapolated intercept of I//S//D for 1/T yields 0 which resembles the Meyer-Neldel rule found in transport measurements on bulk samples. Previous interpretations of the Meyer-Neldel rule in field-effect experiments are discussed in detail. A unified analysis of this effect is given. The field-effect technique provides an alternative experimental method for determining the microscopic prefactor of the bulk conductivity. The accuracy of this approach is examined.

引用

页码：389 / 409

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