TEMPERATURE-DEPENDENT EFFECTS IN FIELD-EFFECT MEASUREMENTS ON HYDROGENATED AMORPHOUS SILICON THIN-FILM TRANSISTORS.

被引：0
|
作者：
Schumacher, R. [1 ]
Thomas P. [1 ]
Weber, K. [1 ]
Fuhs, W. [1 ]
Djamdji, F. [1 ]
Le Comber, P.G. [1 ]
Schropp, R.E.I. [1 ]
机构：
[1] Philipps Univ Marburg, Marburg, West Ger, Philipps Univ Marburg, Marburg, West Ger
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 58卷 / 04期
关键词：
ELECTRIC CONDUCTIVITY - SEMICONDUCTING SILICON - Amorphous - SOLID STATE DEVICES; THIN FILM - Thermal Effects;
D O I：
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学科分类号：
摘要：
The activation energy of the source-drain current I//S//D in hydrogenated amorphous silicon thin-film transistors shows a correlation with the extrapolated intercept of I//S//D for 1/T yields 0 which resembles the Meyer-Neldel rule found in transport measurements on bulk samples. Previous interpretations of the Meyer-Neldel rule in field-effect experiments are discussed in detail. A unified analysis of this effect is given. The field-effect technique provides an alternative experimental method for determining the microscopic prefactor of the bulk conductivity. The accuracy of this approach is examined.
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页码：389 / 409
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