TEMPERATURE-DEPENDENT EFFECTS IN FIELD-EFFECT MEASUREMENTS ON HYDROGENATED AMORPHOUS SILICON THIN-FILM TRANSISTORS.

被引：0

作者：

Schumacher, R. ^{[1
]}

Thomas P. ^{[1
]}

Weber, K. ^{[1
]}

Fuhs, W. ^{[1
]}

Djamdji, F. ^{[1
]}

Le Comber, P.G. ^{[1
]}

Schropp, R.E.I. ^{[1
]}

机构：

[1] Philipps Univ Marburg, Marburg, West Ger, Philipps Univ Marburg, Marburg, West Ger

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1988年 / 58卷 / 04期

关键词：

ELECTRIC CONDUCTIVITY - SEMICONDUCTING SILICON - Amorphous - SOLID STATE DEVICES; THIN FILM - Thermal Effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The activation energy of the source-drain current I//S//D in hydrogenated amorphous silicon thin-film transistors shows a correlation with the extrapolated intercept of I//S//D for 1/T yields 0 which resembles the Meyer-Neldel rule found in transport measurements on bulk samples. Previous interpretations of the Meyer-Neldel rule in field-effect experiments are discussed in detail. A unified analysis of this effect is given. The field-effect technique provides an alternative experimental method for determining the microscopic prefactor of the bulk conductivity. The accuracy of this approach is examined.

引用

页码：389 / 409

共 50 条

[1] TEMPERATURE-DEPENDENT EFFECTS IN FIELD-EFFECT MEASUREMENTS ON HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
SCHUMACHER, R
THOMAS, P
WEBER, K
FUHS, W
DJAMDJI, F
LECOMBER, PG
SCHROPP, REI
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 58 (04): : 389 - 409
[2] A SELF-CONSISTENT ANALYSIS OF TEMPERATURE-DEPENDENT FIELD-EFFECT MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
SCHROPP, REI
SNIJDER, J
VERWEY, JF
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 643 - 649
[3] NEW ANALYSIS OF FIELD-EFFECT CONDUCTANCE IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
LEE, S
CHEN, I
APPLIED PHYSICS LETTERS, 1982, 41 (06) : 558 - 560
[4] Radiation damage of amorphous silicon, thin-film, field-effect transistors
Boudry, JM
Antonuk, LE
MEDICAL PHYSICS, 1996, 23 (05) : 743 - 754
[5] THIN-FILM FIELD-EFFECT TRANSISTORS INCORPORATING HYDROGENATED AMORPHOUS-SILICON PRODUCED BY RF MAGNETRON SPUTTERING
ABDULRIDA, MC
ALLISON, J
THIN SOLID FILMS, 1983, 102 (04) : L43 - L46
[6] Field-effect mobility of amorphous silicon thin-film transistors under strain
Gleskova, H
Hsu, PI
Xi, Z
Sturm, JC
Suo, Z
Wagner, S
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 732 - 735
[7] Amorphous Silicon Thin Film Transistors.
Pietruszko, Stanislaw
Elektronika Warszawa, 1987, 28 (2-3): : 10 - 14
[8] TEMPERATURE-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
CHEN, BY
WU, WH
CHEN, JR
HONG, CS
JOURNAL OF MATERIALS SCIENCE, 1995, 30 (09) : 2254 - 2256
[9] AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH VERY HIGH FIELD-EFFECT MOBILITY
LIN, JL
SAH, WJ
LEE, SC
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (03) : 120 - 121
[10] THE DETERMINATION OF CHARACTERISTIC PARAMETERS BY THE TEMPERATURE-DEPENDENT FIELD-EFFECT IN A-SI-H THIN-FILM TRANSISTORS
SCHROPP, REI
BROUWER, GJM
VERWEY, JF
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 511 - 514

← 1 2 3 4 5 →