Crystal growth of BSO (Bi4Si3O12) by vertical Bridgman method

被引：10

作者：

Ishii, M. ^{[1
]}

Harada, K. ^{[1
]}

Senguttuvan, N. ^{[1
]}

Kobayashi, M. ^{[2
]}

Yamaga, I. ^{[3
]}

机构：

[1] Dept. of Mat. Sci. and Cer. Technol., Shonan Institute of Technology, Fujisawa-Kanagawa 251-8511, Japan

[2] KEK, High Ener. Accel. Res. Organization, Tsukuba 305-0801, Japan

[3] Futek Furnace Co., Fukuura, Kanazawa, Yokohama 236-0004, Japan

来源：

Journal of Crystal Growth | 1999年 / 205卷 / 01期

关键词：

Crystal growth from melt - Optical properties - Phosphors - Segregation (metallography) - Single crystals - Stoichiometry;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Colorless and crack-free single crystals of bismuth silicate (Bi4Si3O12, BSO) have been grown by the vertical Bridgman method. Some segregation phases have been found to form on the surface and at the top of the crystals grown from both stoichiometric and off-stoichiometric melt compositions. Effect of growth rate and melt composition was also analyzed. Better optical transmittance could be achieved in the crystals grown at a rate of 0.65 mm h-1 or less in air with good reproducibility. It is proposed that BSO crystals of larger size could be grown with fewer difficulties by Bridgman method than by Czochralski method for use in high-energy physics applications.

引用

页码：191 / 195

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