Crystal growth of BSO (Bi4Si3O12) by vertical Bridgman method

被引：10

作者：

Ishii, M. ^{[1
]}

Harada, K. ^{[1
]}

Senguttuvan, N. ^{[1
]}

Kobayashi, M. ^{[2
]}

Yamaga, I. ^{[3
]}

机构：

[1] Dept. of Mat. Sci. and Cer. Technol., Shonan Institute of Technology, Fujisawa-Kanagawa 251-8511, Japan

[2] KEK, High Ener. Accel. Res. Organization, Tsukuba 305-0801, Japan

[3] Futek Furnace Co., Fukuura, Kanazawa, Yokohama 236-0004, Japan

来源：

Journal of Crystal Growth | 1999年 / 205卷 / 01期

关键词：

Crystal growth from melt - Optical properties - Phosphors - Segregation (metallography) - Single crystals - Stoichiometry;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Colorless and crack-free single crystals of bismuth silicate (Bi4Si3O12, BSO) have been grown by the vertical Bridgman method. Some segregation phases have been found to form on the surface and at the top of the crystals grown from both stoichiometric and off-stoichiometric melt compositions. Effect of growth rate and melt composition was also analyzed. Better optical transmittance could be achieved in the crystals grown at a rate of 0.65 mm h-1 or less in air with good reproducibility. It is proposed that BSO crystals of larger size could be grown with fewer difficulties by Bridgman method than by Czochralski method for use in high-energy physics applications.

引用

页码：191 / 195

共 50 条

[31] Dielectric properties of ionically conducting glass Bi4Si3O12
Cho, JH
Yang, YS
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1445 - S1448
[32] Spectroscopic characterization of Er3+ transitions in Bi4Si3O12
Lira, A
Camarillo, I
Camarillo, E
Ramos, F
Flores, M
Caldiño, U
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (32) : 5925 - 5936
[33] Growth and scintillation properties of Tm3+ doped Bi4Si3O12 single crystals
Xiao, Xuefeng
Zhang, Huan
Wei, Haicheng
Xu, Jiayuei
Chu, Yaoqing
Yang, Bobo
Zhang, Xuefeng
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2020, 14 (7-8): : 367 - 371
[34] OH- absorption in Bi4Si3O12 single crystals
Kovacs, L
Beneventi, P
Capelletti, R
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1995, 134 (1-4): : 287 - 291
[35] Fundamental absorption edge of thin films of Bi4Si3O12
O. M. Bordun
Journal of Applied Spectroscopy, 1997, 64 (2) : 246 - 250
[36] Fundamental absorption edge of thin films of Bi4Si3O12
J. Appl. Spectrosc., 2 (246-250):
[37] THERMOLUMINESCENCE SPECTRA OF EULYTINE BI4SI3O12 AND BI4GE3O12 SINGLE-CRYSTALS
KOVACS, L
RAYMOND, SG
LUFF, BJ
PETER, A
TOWNSEND, PD
JOURNAL OF LUMINESCENCE, 1994, 60-1 : 574 - 577
[38] Spectroscopic properties and continuous-wave laser operation of Yb:Bi4Si3O12 crystal
Wang, Han
Chen, Yujin
Huang, Jianhua
Gong, Xinghong
Lin, Yanfu
Luo, Zundu
Huang, Yidong
OPTICS EXPRESS, 2014, 22 (18): : 21866 - 21871
[39] Bismuth silicate Bi4Si3O12, a faster scintillator than bismuth germanate Bi4Ge3O12
Kobayashi, Masaaki
Ishii, Mitsuru
Harada, Kenji
Yamaga, Isao
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996, 372 (1-2): : 45 - 50
[40] 水热法制备Bi4Si3O12粉体
贾彩霞
江元汝
谢会东
李兆
应用化工, 2011, 40 (08) : 1357 - 1359

← 1 2 3 4 5 →