INFLUENCE OF THE CHARGE STATE OF PRIMARY DEFECTS ON THE FORMATION OF COMPLEXES IN n-TYPE SILICON.

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作者：
Gubskaya, V.I.
Kuchinskii, P.V.
Lomako, V.M.
机构：
来源：
Soviet physics. Semiconductors | 1980年 / 14卷 / 02期
关键词：
Compendex;
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摘要：
SEMICONDUCTING SILICON
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页码：189 / 191
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