INFLUENCE OF THE CHARGE STATE OF PRIMARY DEFECTS ON THE FORMATION OF COMPLEXES IN n-TYPE SILICON.

被引：0

作者：

Gubskaya, V.I.

Kuchinskii, P.V.

Lomako, V.M.

机构：

来源：

Soviet physics. Semiconductors | 1980年 / 14卷 / 02期

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Compendex;

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摘要：

SEMICONDUCTING SILICON

引用

页码：189 / 191

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[1] INFLUENCE OF THE CHARGE STATE OF PRIMARY DEFECTS ON THE FORMATION OF COMPLEXES IN N-TYPE SILICON
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[8] ORIENTATION DEPENDENCE OF THE FORMATION OF RADIATION DEFECTS IN N-TYPE SILICON
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