ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN delta -DOPED n-GaAs AT T equals 300 K.

被引：0

作者：

Schubert, E.F. ^{[1
]}

Cunningham, J.E. ^{[1
]}

Tsang, W.T. ^{[1
]}

机构：

[1] AT&T, Holmdel, NJ, USA, AT&T, Holmdel, NJ, USA

来源：

| 1600年 / 63期

关键词：

DOPED EPITAXIAL LAYERS - DOPING CONCENTRATIONS - ELECTRON-CONCENTRATION ENHANCEMENT - ELECTRON-MOBILITY ENHANCEMENT - HALL-MOBILITY MEASUREMENTS - MATERIAL-GROWTH TECHNOLOGIES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 47 条

[31] SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH ELECTRON-MOBILITY TRANSISTOR IC APPLICATIONS
HIYAMIZU, S
SAITO, J
KONDO, K
YAMAMOTO, T
ISHIKAWA, T
SASA, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 585 - 587
[32] INFLUENCES OF DELTA-DOPING TIME AND SPACER THICKNESS ON THE MOBILITY AND 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN DELTA-DOPED GAAS/INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES
SHIEH, HM
HSU, WC
KAO, MJ
WU, CL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 154 - 157
[33] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION
MORKOC, H
DRUMMOND, TJ
THORNE, RE
KOPP, W
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L913 - L916
[34] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
SAITO, J
NANBU, K
ISHIKAWA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
[35] Two-dimensional electron gas mobility enhancement in inverted GaAs/n-AlGaAs heterostructures grown by molecular beam epitaxy
Fatt, Yoon Soon, 1600, (31):
[36] ELECTRON-TRANSPORT IN HEAVILY DOPED AND COMPENSATED N-TYPE GAAS IN THE TEMPERATURE-RANGE 4.2-300-K
SAXENA, TK
BALA, S
AGARWAL, SK
MATHUR, PC
CHAUDHURI, KD
PHYSICAL REVIEW B, 1980, 22 (06): : 2962 - 2967
[37] VARIATION OF THE MOBILITY AND THE 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION WITH INDIUM COMPOSITION IN DELTA-DOPED GAAS/INXGA1-XAS/GAAS PSEUDOMORPHIC STRUCTURES
HSU, WC
CHEN, CM
LIN, W
JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) : 4332 - 4335
[38] Enhancement of electron mobility and thermoelectric power factor of cobalt-doped n-type Bi2Te3
Singha, P.
Das, Subarna
Kulbashinskii, V. A.
Kytin, V. G.
Chakravarty, Sujay
Deb, A. K.
Bandyopadhyay, S.
Banerjee, Aritra
INTERNATIONAL JOURNAL OF ENERGY RESEARCH, 2022, 46 (12) : 17029 - 17042
[39] HIGH 2-DIMENSIONAL ELECTRON-MOBILITY IN SI ATOMIC-LAYER DOPED N-ALGAAS GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION
MAKIMOTO, T
KOBAYASHI, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (5A): : L648 - L649
[40] 2-DIMENSIONAL ELECTRON-GAS MOBILITY ENHANCEMENT IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
FATT, YS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (07): : 2075 - 2078

← 1 2 3 4 5 →