ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN delta -DOPED n-GaAs AT T equals 300 K.

被引：0

作者：

Schubert, E.F. ^{[1
]}

Cunningham, J.E. ^{[1
]}

Tsang, W.T. ^{[1
]}

机构：

[1] AT&T, Holmdel, NJ, USA, AT&T, Holmdel, NJ, USA

来源：

| 1600年 / 63期

关键词：

DOPED EPITAXIAL LAYERS - DOPING CONCENTRATIONS - ELECTRON-CONCENTRATION ENHANCEMENT - ELECTRON-MOBILITY ENHANCEMENT - HALL-MOBILITY MEASUREMENTS - MATERIAL-GROWTH TECHNOLOGIES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 47 条

[21] LUMINESCENCE EXPERIMENTS ON ACCEPTOR DELTA-DOPED GAAS-ALGAAS SINGLE HETEROJUNCTIONS WITH OPTICALLY TUNABLE ELECTRON-CONCENTRATION
KUKUSHKIN, IV
PLAUT, AS
VONKLITZING, K
PLOOG, K
SURFACE SCIENCE, 1990, 229 (1-3) : 447 - 451
[22] Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure
Panda, Sangita R.
Pradhan, Manoranjan
Sahu, Trinath
Panda, Ajit Kumar
PHYSICA SCRIPTA, 2023, 98 (12)
[23] Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
Andresen, SE
Sorensen, BS
Rasmussen, FB
Lindelof, PE
Sadowski, J
Guertler, CM
Bland, JAC
JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 3990 - 3994
[24] ELECTRON-CONCENTRATION AND CONDUCTION-BAND DISCONTINUITY IN SELECTIVELY DOPED N-ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES
TOMOZAWA, H
MATSUZAKI, K
HASEGAWA, H
OHNO, H
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 369 - 374
[25] SPATIAL LOCALIZATION AND DIFFUSION OF SI IN DELTA-DOPED GAAS AND ALXGA1-XAS AND ITS APPLICATION TO ELECTRON-MOBILITY OPTIMIZATION IN SELECTIVELY DOPED HETEROSTRUCTURES
SCHUBERT, EF
CUNNINGHAM, JE
CHIU, TH
STARK, JB
TELL, B
TU, CW
INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 33 - 40
[26] SPATIAL LOCALIZATION AND DIFFUSION OF SI IN DELTA-DOPED GAAS AND ALXGA1-XAS AND ITS APPLICATION TO ELECTRON-MOBILITY OPTIMIZATION IN SELECTIVELY DOPED HETEROSTRUCTURES
SCHUBERT, EF
CUNNINGHAM, JE
CHIU, TH
STARK, JB
TELL, B
TU, CW
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 33 - 40
[27] Universal scheme for measuring the electron T1 in semiconductors and application to a lightly-doped n-GaAs sample
Colton, J. S.
Clark, K.
Meyer, D.
Park, T.
Smith, D.
Thalman, S.
SOLID STATE COMMUNICATIONS, 2012, 152 (05) : 410 - 413
[28] A STUDY ON THE TEMPERATURE-DEPENDENCE OF THE QUASI-2-DIMENSIONAL ELECTRON-CONCENTRATION AND MOBILITY IN ALXGA1-XAS/GAAS SELECTIVELY DOPED HETEROSTRUCTURES
SIMSERIDES, CD
TRIBERIS, GP
JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (31) : 6317 - 6326
[29] ELECTRON-MOBILITY ENHANCEMENT IN STRAINED-SI N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
WELSER, J
HOYT, JL
GIBBONS, JF
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (03) : 100 - 102
[30] A DELTA-DOPED GAAS/IN0.37GA0.63AS/GAAS HIGH ELECTRON-MOBILITY TRANSISTOR PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
HSU, WC
SHIEH, HM
SOLID-STATE ELECTRONICS, 1992, 35 (05) : 635 - 638

← 1 2 3 4 5 →