Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system

被引：0

作者：

Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany ^{[1
]}

机构：

来源：

Microelectron Eng | / 1卷 / 323-326期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] GAAS RADICAL ETCHING WITH A CL2 PLASMA IN A REACTIVE ION-BEAM ETCHING SYSTEM
SUGATA, S
ASAKAWA, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L564 - L566
[32] ION-BEAM ASSISTED ETCHING OF ALUMINUM WITH CHLORINE
TSOU, LY
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C87 - C87
[33] Chemically assisted ion beam etching of GaAs/AlGaAs using chlorine ions
Kawanishi, H
Morioka, T
Shimonaka, A
Taneya, M
Suzuki, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (7B): : L880 - L882
[34] CHARACTERISTICS OF ION-BEAM ASSISTED ETCHING OF GAAS USING FOCUSED ION-BEAM - DEPENDENCE ON GAS-PRESSURE
OCHIAI, Y
GAMO, K
NAMBA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L400 - L402
[35] ION-BEAM ETCHING
LIEBEL, G
F&M-FEINWERKTECHNIK & MESSTECHNIK, 1987, 95 (07): : 436 - 440
[36] ION-BEAM ETCHING
GLOERSEN, PG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 28 - 35
[37] ANGLED CHLORINE ION-BEAM ASSISTED ETCHING, A TECHNIQUE FOR SCULPTURING IN GAAS AND ALGAAS
GOODHUE, WD
PANG, SW
HOLLIS, MA
DONNELLY, JP
JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S17 - S17
[38] CHARACTERISTICS OF A 2-COMPONENT CHEMICALLY-ASSISTED ION-BEAM ETCHING TECHNIQUE FOR DRY-ETCHING OF HIGH-SPEED MULTIPLE-QUANTUM-WELL LASER MIRRORS
SAH, RE
RALSTON, JD
WEISSER, S
EISELE, K
APPLIED PHYSICS LETTERS, 1995, 67 (07) : 927 - 929
[39] ION-BEAM ETCHING GAAS FOR INTEGRATED OPTICAL APPLICATIONS
WEBB, AP
WILKINSON, CDW
VACUUM, 1984, 34 (1-2) : 159 - 162
[40] ELECTRICAL DAMAGE INDUCED BY ION-BEAM ETCHING OF GAAS
SCHERER, A
CRAIGHEAD, HG
ROUKES, ML
HARBISON, JP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 277 - 279

← 1 2 3 4 5 →