Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system

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Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany ^{[1
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Microelectron Eng | / 1卷 / 323-326期

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[21] CHEMICALLY ASSISTED ION-BEAM ETCHING FOR SUB-MICRON STRUCTURES
CHINN, JD
ADESIDA, I
WOLF, ED
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1028 - 1032
[22] CHEMICALLY ASSISTED ION-BEAM ETCHING FOR SILICON-BASED MICROFABRICATION
CHIEH, YS
KRUSIUS, JP
CHAPMAN, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (06) : 1585 - 1589
[23] ION-BEAM ASSISTED ETCHING AND DEPOSITION
GAMO, K
NAMBA, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1927 - 1931
[24] ION-BEAM ASSISTED ETCHING.
Kireev, V.Yu.
Nazarov, D.A.
Kuznetsov, V.I.
Soviet surface engineering and applied electrochemistry, 1986, (06): : 52 - 57
[25] CHARACTERIZATION OF ETCH RATE AND ANISOTROPY IN THE TEMPERATURE-CONTROLLED CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS
GRANDE, WJ
JOHNSON, JE
TANG, CL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05): : 1075 - 1079
[26] GAAS ALGAAS PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING CHEMICALLY ASSISTED ION-BEAM ETCHING
GRANDE, WJ
JOHNSON, JE
TANG, CL
APPLIED PHYSICS LETTERS, 1990, 57 (24) : 2537 - 2539
[27] ANNEALING BEHAVIOR OF DAMAGE INTRODUCED IN GAAS BY REACTIVE ION-BEAM ETCHING
YAMANE, Y
YAMASAKI, K
MIZUTANI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L537 - L538
[28] THE CHARACTERISTICS OF ION-BEAM-ASSISTED ETCHING OF GAAS BY PULSED FOCUSED ION-BEAM IRRADIATION
KOSUGI, T
IWASE, H
GAMO, K
MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 307 - 310
[29] SUPERLUMINESCENT DIODES WITH ANGLED FACET ETCHED BY CHEMICALLY ASSISTED ION-BEAM ETCHING
LIN, CF
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[30] REACTIVE AND CHEMICALLY ASSISTED ION-BEAM ETCHING OF SI AND SIO2
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