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- [31] Formation of InAs dots on AlGaAs ridge wire structures by selective area MOVPE growth 1600, Japan Society of Applied Physics (41):
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- [34] Effect of AlGaAs Buffer Layer on Defect Distribution in Cubic GaN Grown on GaAs (001) by MOVPE CHIANG MAI JOURNAL OF SCIENCE, 2013, 40 (06): : 971 - 977
- [35] Selective MOVPE growth of (Al)GaAs using DMGaCl and DMAlCl 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 211 - 216
- [36] MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
- [39] Subsurface ordering and kinetic coefficient for melt growth THEORETICAL AND TECHNOLOGICAL ASPECTS OF CRYSTAL GROWTH, 1998, 276-2 : 79 - 86
- [40] Comparative study of GaN growth process by MOVPE WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 463 - 468