Kinetic study of Al distribution coefficient in MOVPE growth of AlGaAs

被引：0
|
作者：
Gong, Yanning
Mo, Jinji
Yu, Haisheng
Xia, Guanqun
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：137 / 141
相关论文
共 50 条
  • [21] LARGE-AREA GROWTH OF ALGAAS/GAAS HETEROSTRUCTURES BY MOVPE FOR HEMT LSIS
    OHORI, T
    MAKIYAMA, K
    TAKIKAWA, M
    TOMESAKAI, N
    TANAKA, H
    TOH, H
    KASAI, K
    SUZUKI, M
    KOMENO, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 459 - 464
  • [22] LARGE-AREA MOVPE GROWTH OF GAAS/ALGAAS HETEROSTRUCTURES FOR HEMT LSIS
    KOMENO, J
    TANAKA, H
    TOMESAKAIN
    OHORI, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 889 - 889
  • [23] NOVEL SELECTIVE AREA GROWTH OF ALGAAS AND ALAS WITH HCL-GAS BY MOVPE
    SHIMOYAMA, K
    INOUE, Y
    FUJII, K
    GOTOH, H
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 235 - 242
  • [24] KINETIC SIMULATION OF GAS-PHASE REACTIONS IN MOVPE GROWTH
    TANAKA, H
    KOMENO, J
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 115 - 119
  • [25] MOVPE growth and characterisation of (Al,Ga)N layers
    Paszkiewicz, R
    Korbutowicz, R
    Radziewicz, D
    Panek, M
    Paszkiewicz, B
    Kozlowski, J
    Boratynski, B
    Tlaczala, M
    ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 59 - 62
  • [26] In situ monitoring of parasitic growth on the quartz top plate during the MOVPE growth of GaAs/AlGaAs structures
    Weeks, KJ
    Irvine, SJC
    Bland, SW
    JOURNAL OF CRYSTAL GROWTH, 2003, 257 (1-2) : 116 - 122
  • [27] LARGE-AREA AND HIGHLY UNIFORM MOVPE GROWTH FOR ALGAAS/GAAS HEMT LSIS
    TOMESAKAI, N
    SUZUKI, M
    KOMENO, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (08) : 2432 - 2438
  • [28] MOVPE growth and optimization of GRINSCH single quantum well AlGaAs/GaAs laser diodes
    Bag, Rajesh K.
    Tyagi, Renu
    Haldar, T.
    Singh, Mahavir
    Mohan, Premila
    Mishra, Puspashree
    Muralidharan, R.
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 521 - 524
  • [29] MOVPE GROWTH OF SI PLANAR-DOPED ALGAAS/INGAAS PSEUDOMORPHIC HEMT STRUCTURES
    SAKAGUCHI, H
    TSUCHIYA, T
    MEGURO, T
    NAGAI, H
    KUMA, S
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 519 - 524
  • [30] Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures
    Sakuma, M
    Fukui, T
    Kumakura, K
    Motohisa, J
    CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 259 - 263
12345