Kinetic study of Al distribution coefficient in MOVPE growth of AlGaAs

被引:0
|
作者
Gong, Yanning
Mo, Jinji
Yu, Haisheng
Xia, Guanqun
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11
引用
收藏
页码:137 / 141
相关论文
共 50 条
  • [1] Kinetic study on uniformity of AlGaAs grown by MOVPE
    Gong, YN
    Mo, JJ
    Yu, HS
    Wang, L
    Xia, GQ
    RARE METALS, 1999, 18 (04) : 264 - 269
  • [2] Kinetic Study on Uniformity of AlGaAs Grown by MOVPE
    公延宁
    莫金玑
    余海生
    汪乐
    夏冠群
    RareMetals, 1999, (04) : 264 - 269
  • [3] MOVPE growth of AlGaAs/GaInP diode lasers
    F. Bugge
    A. Knauer
    S. Gramlich
    I. Rechenberg
    G. Beister
    J. Sebastian
    H. Wenzel
    G. Erbert
    M. Weyers
    Journal of Electronic Materials, 2000, 29 : 57 - 61
  • [4] MOVPE growth of AlGaAs/GaInP diode lasers
    Bugge, F
    Knauer, A
    Gramlich, S
    Rechenberg, I
    Beister, G
    Sebastian, J
    Wenzel, H
    Erbert, G
    Weyers, M
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) : 57 - 61
  • [5] CONTROL OF COMPOSITION VARIATION IN MOVPE ALGAAS GROWTH
    MAKAROV, YN
    ZHMAKIN, AI
    JOURNAL OF CRYSTAL GROWTH, 1990, 100 (03) : 646 - 650
  • [6] MOVPE GROWTH OF ALGAAS USING TRIMETHYLAMINE ALANE
    ROBERTS, JS
    BUTTON, CC
    DAVID, JPR
    JONES, AC
    RUSHWORTH, SA
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (04) : 857 - 860
  • [7] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE
    HERSEE, SD
    BARBIER, E
    BLONDEAU, R
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 310 - 320
  • [8] MOVPE GROWTH OF ALGAAS ON PREFERENTIALLY DRY ETCHED SUBSTRATES
    TATE, A
    OHMORI, Y
    KOBAYASHI, M
    JOURNAL OF CRYSTAL GROWTH, 1988, 89 (2-3) : 360 - 362
  • [10] MOVPE GROWTH OF ALGAAS/GAAS HETEROSTRUCTURES FOR HEMT LSI
    ITOH, H
    TANAKA, H
    OHORI, T
    KASAI, K
    MITANI, E
    SUZUKI, M
    KOMENO, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10): : L1693 - L1695