Heavily carbon doped base InP/InGaAs heterojunction bipolar transistors grown by two-step metalorganic chemical vapor deposition

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作者：
Ito, Hiroshi [1 ]
Yamahata, Shoji [1 ]
Shigekawa, Naoteru [1 ]
Kurishima, Kenji [1 ]
机构：
[1] NTT LSI Lab, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 12 A期
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页码：6139 / 6144
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