Heavily carbon doped base InP/InGaAs heterojunction bipolar transistors grown by two-step metalorganic chemical vapor deposition

被引：0

作者：

Ito, Hiroshi ^{[1
]}

Yamahata, Shoji ^{[1
]}

Shigekawa, Naoteru ^{[1
]}

Kurishima, Kenji ^{[1
]}

机构：

[1] NTT LSI Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 12 A期

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D O I：

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摘要：

引用

页码：6139 / 6144

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[1] Heavily carbon doped base InP/InGaAs heterojunction bipolar transistors grown by two-step metalorganic chemical vapor deposition
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[2] Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors
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[3] CARBON INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND APPLICATION TO INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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[7] INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON (100) SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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