共 50 条
- [42] Immortality of Cu damascene interconnects STRESS-INDUCED PHENOMENA IN METALLIZATION, 2002, 612 : 21 - 32
- [43] Barrier-first integration for improved reliability in copper dual damascene interconnects PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2003, : 27 - 29
- [44] Electromigration induced incubation, drift and threshold in single-damascene copper interconnects PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2002, : 127 - 129
- [45] Electromigration threshold length effect in dual damascene copper-oxide interconnects 40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, : 433 - 434
- [46] Electrodepositing a copper seed layer directly on diffusion barriers for damascene interconnects. ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 517 - 523