Damascene copper interconnects with polymer ILDs

被引：0
|
作者：
Rensselaer Polytechnic Inst, Troy, United States [1 ]
机构：
来源：
Thin Solid Films | / 523-528期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Electromigration in damascene copper interconnects of line width down to 100 nm
    Roy, Arijit
    Kumar, Rakesh
    Tan, Cher Ming
    Wong, Terence K. S.
    Tung, C-H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (09) : 1369 - 1372
  • [32] Influence of line-width on microstructure and texture of damascene copper interconnects
    Mirpuri, KJ
    Szpunar, JA
    Kozaczek, KJ
    MAGNETIC AND ELECTRONIC FILMS-MICROSTRUCTURE, TEXTURE AND APPLICATION TO DATA STORAGE, 2002, 721 : 137 - 142
  • [33] Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
    Ngwan, VC
    Zhu, CX
    Krishnamoorthy, A
    THIN SOLID FILMS, 2004, 462 : 321 - 324
  • [34] Bulk and interfacial leakage current in dielectric degradation of copper damascene interconnects
    Yoshie, T
    Yoneda, K
    Ohashi, N
    Kobayashi, N
    ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003), 2004, : 411 - 414
  • [35] Manufacturing-ready selectivity of CoWP capping on damascene copper interconnects
    Segawa, Y
    Horikoshi, H
    Ohtorii, H
    Tai, K
    Komai, N
    Sato, S
    Takahashi, S
    Ohoka, Y
    Yasuda, Z
    Ishihara, M
    Yoshio, A
    Nogami, T
    ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), 2001, : 567 - 572
  • [36] Effect of layout variation on stress migration in dual damascene copper interconnects
    Suzuki, Takashi
    Kouno, Takahiro
    Matsuyama, Hideya
    Nakamura, Tom. Oji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2484 - 2487
  • [37] Properties of PEG, PPG and Their Copolymers: Influence on Copper Filling of Damascene Interconnects
    Ryan, Kevin
    Dunn, Kathleen
    van Eisden, Jobert
    Adolf, James
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2013, 160 (12) : D3186 - D3196
  • [38] Mechanical stress measurements in damascene copper interconnects and influence on electromigration parameters
    Reimbold, G
    Sicardy, O
    Arnaud, L
    Fillot, F
    Torres, J
    INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 745 - 748
  • [39] Grain growth in Damascene interconnects
    Weygand, D.
    Verdier, M.
    Lepinoux, J.
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2009, 17 (06)
  • [40] CONTACT AND VIA STRUCTURES WITH COPPER INTERCONNECTS FABRICATED USING DUAL DAMASCENE TECHNOLOGY
    LAKSHMINARAYANAN, S
    STEIGERWALD, J
    PRICE, DT
    BOURGEOIS, M
    CHOW, TP
    GUTMANN, RJ
    MURARKA, SP
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) : 307 - 309
12345