METHOD OF MEASURING THE INHOMOGENEITIES OF THE ELECTROPHYSICAL PROPERTIES OF SEMIINSULATING GALLIUM ARSENIDE.

In connection with the extension of the domain of application of semiinsulating GaAs, a requirement to control the homogeneity of this material appeared in addition to the usual demands on its integral parameters. There are reports in the literature about the utilization of an optical method based on light absorption by deep centers and the method of resistance to spreading with bias lighting for this purpose. Because the distribution of deep centers does not determine uniquely the homogeneity of the electrophysical properties of semiinsulating GaAs, the possibilities of the second method of measuring the inhomogeneity was investigated in this paper. A description of the installation of this method and sufficiently contradictory data about the substance of the parameters being measured, the specific resistivity, and the photoconductivity signal, are contained in the literature.