A physically based lifetime model for stress-induced voiding in interconnects

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作者：
Zhai, Charlie Jun [1 ]
Blish, Richard Clark [1 ]
机构：
[1] Advanced Micro Devices, Inc., MS 79, One AMD Place, Sunnyvale, CA 94088, United States
来源：
Journal of Applied Physics | 2005年 / 97卷 / 11期
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