Formation of gallium microinclusions in GaAs single crystals

被引:0
|
作者
Vasilenko, N.D. [1 ]
Gorbatyuk, A.Ya. [1 ]
Maronchuk, I.E. [1 ]
机构
[1] I.I. Mechnikov State Univ, Russia
来源
关键词
Crystals - Growth - Liquid Metals - Diffusion - Mathematical Models - Solid Solutions - Decomposition;
D O I
暂无
中图分类号
学科分类号
摘要
We analyze the causes of gallium microinclusion formation in gallium arsenide single crystals. We present a model in which microinclusions result from the decomposition of a supersaturated solid solution. From experimental data available in the literature and calculated kinetic parameters of the model we demonstrate that microinclusion formation in bulk single crystals follows the mechanism of homogeneous nucleation and Brownian coalescence in precipitated liquid gallium metal.
引用
收藏
页码:110 / 113
相关论文
共 50 条
  • [41] AN APPARATUS FOR GROWING SINGLE CRYSTALS OF GALLIUM ARSENIDE
    RICHARDS, JL
    JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (07): : 289 - 290
  • [42] Photoconductivity studies of gallium sesquisulphide single crystals
    ElShaikh, HA
    AbdalRahman, M
    Belal, AE
    Ashraf, IM
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (02) : 466 - 469
  • [43] Large magnetoresistance and superconductivity in α-gallium single crystals
    Chen, Bin
    Duan, Xu
    Wang, Hangdong
    Du, Jianhua
    Zhou, Yuxing
    Xu, Chunqiang
    Zhang, Yukun
    Zhang, Liyao
    Wei, Meng
    Xia, Zhengcai
    Cao, Chao
    Dai, Jianhui
    Fang, Minghu
    Yang, Jinhu
    NPJ QUANTUM MATERIALS, 2018, 3
  • [44] Photoconductivity studies of gallium sesquisulphide single crystals
    Assiut Univ, Aswan, Egypt
    J Phys D, 2 (466-469):
  • [45] CATHODOLUMINESCENCE OF GALLIUM NITRIDE SINGLE-CRYSTALS
    PIKHTIN, AN
    PICHUGIN, IG
    ELGIZIRI, S
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (01): : 134 - 136
  • [46] HOPPING CONDUCTION IN GALLIUM SELENIDE SINGLE CRYSTALS
    TREDGOLD, RH
    CLARK, A
    SOLID STATE COMMUNICATIONS, 1969, 7 (21) : 1519 - &
  • [47] OHMIC CONTACTS TO GALLIUM ARSENIDE SINGLE CRYSTALS
    SANDULOV.AV
    VARSHAVA, SS
    SCHERBAI, KS
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1970, (01): : 260 - &
  • [48] Specific Features of the Formation of Dislocation Structure in Gallium Arsenide Single Crystals Obtained by the Czochralski Method
    Parfenteva, I. B.
    Pugachev, B. V.
    Pavlov, V. F.
    Kozlova, Yu. P.
    Knyazev, C. N.
    Yugova, T. G.
    CRYSTALLOGRAPHY REPORTS, 2017, 62 (02) : 275 - 278
  • [49] Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method
    I. B. Parfenteva
    B. V. Pugachev
    V. F. Pavlov
    Yu. P. Kozlova
    C. N. Knyazev
    T. G. Yugova
    Crystallography Reports, 2017, 62 : 275 - 278
  • [50] Microhardness testing of GaAs single crystals
    Mikro- und ultramikrohärte-prüfung an GaAs-einkristallen
    2001, Carl Hanser Verlag (43):