Formation of gallium microinclusions in GaAs single crystals

被引:0
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作者
Vasilenko, N.D. [1 ]
Gorbatyuk, A.Ya. [1 ]
Maronchuk, I.E. [1 ]
机构
[1] I.I. Mechnikov State Univ, Russia
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Crystals - Growth - Liquid Metals - Diffusion - Mathematical Models - Solid Solutions - Decomposition;
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摘要
We analyze the causes of gallium microinclusion formation in gallium arsenide single crystals. We present a model in which microinclusions result from the decomposition of a supersaturated solid solution. From experimental data available in the literature and calculated kinetic parameters of the model we demonstrate that microinclusion formation in bulk single crystals follows the mechanism of homogeneous nucleation and Brownian coalescence in precipitated liquid gallium metal.
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页码:110 / 113
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