Formation of gallium microinclusions in GaAs single crystals

被引：0
|
作者：
Vasilenko, N.D. [1 ]
Gorbatyuk, A.Ya. [1 ]
Maronchuk, I.E. [1 ]
机构：
[1] I.I. Mechnikov State Univ, Russia
来源：
Soviet physics journal | 1988年
关键词：
Crystals - Growth - Liquid Metals - Diffusion - Mathematical Models - Solid Solutions - Decomposition;
D O I：
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中图分类号：
学科分类号：
摘要：
We analyze the causes of gallium microinclusion formation in gallium arsenide single crystals. We present a model in which microinclusions result from the decomposition of a supersaturated solid solution. From experimental data available in the literature and calculated kinetic parameters of the model we demonstrate that microinclusion formation in bulk single crystals follows the mechanism of homogeneous nucleation and Brownian coalescence in precipitated liquid gallium metal.
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页码：110 / 113
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