BIAS EFFECTS ON PREPARATION OF DOPED AMORPHOUS SILICON IN A TRIODE GLOW DISCHARGE.

被引：0

作者：

Aozasa, Masao ^{[1
]}

Pyon, Ryun Gill ^{[1
]}

Ando, Keiichi ^{[1
]}

机构：

[1] Osaka City Univ, Jpn, Osaka City Univ, Jpn

来源：

Memoirs of the Faculty of Engineering, Osaka City University | 1986年 / 27卷

关键词：

PHOTOCONDUCTING DEVICES - Manufacture;

D O I：

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中图分类号：

学科分类号：

摘要：

Bias effects on the preparation of doped amorphous silicon are investigated using a triode glow discharge. The negative bias improves the quality of the phosphorus-doped amorphous silicon films, while it does not improve the quality of boron-doped films.

引用

页码：53 / 65

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